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AON4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AON4703 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4703 is Pb-free (meets ROHS & Sony 259 specifications). AON4703L is a Green Product ordering option. AON4703 and AON4703L are electrically identical.
Features
VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90m (VGS = -4.5V) RDS(ON) < 120m (VGS = -2.5V) RDS(ON) < 160m (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A
D A A S G 1 2 3 4 8 7 6 5 K K D D G S
K
DFN3X2-8L Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentA Pulsed Drain Current
B
A
MOSFET -20 8 -3.4 -2.7 -15
Schottky
Units V V A
TA=25C TA=70C
ID IDM VKA
Schottky reverse voltage Continuous Forward CurrentA Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky t 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-LeadC
B
TA=25C TA=70C TA=25C TA=70C
IF IFM PD TJ, TSTG Symbol RJA RJL RJA RJL 1.7 1.1 -55 to 150 Typ 51 88 28 66 95 40
20 1.9 1.2 7 0.96 0.62 -55 to 150 Max 75 110 35 80 130 50
V A
W C Units C/W
C/W
Alpha & Omega Semiconductor, Ltd.
AON4703
Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.4A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-1.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3.4A 4 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.3 -15 73 110 99 133 7 -0.83 -1 -2 540 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72 49 12 6.1 VGS=-4.5V, VDS=-10V, ID=-3.4A 0.6 1.6 10 VGS=-4.5V, VDS=-10V, RL=2.9, RGEN=3 IF=-3.4A, dI/dt=100A/s 12 44 22 21 7.5 0.39 0.5 0.1 20 34 5.2 0.8 10 90 135 120 160 -0.63 Min -20 -1 -5 100 -1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V mA pF ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/s SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=0.5A Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance SchottkyReverse Recovery Time Schottky Reverse Recovery Charge VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0. June 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 -2.5V 6 VDS=-5V
5 VGS=-1.5V
2
125C
25C 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0
165
1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics
0.5
2
160 150 140 130 RDS(ON) (m) 120 110 100 90 80 70 60 50 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 VGS=-4.5V VGS=-2.5V VGS=-1.8V Normalized On-Resistance
1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-3.4A VGS=-1.8V ID=-1.5A VGS=-2.5V ID=-2.5A
VGS=-4.5V ID=-3.4A
150 RDS(ON) (m) -IS (A)
1E-01 1E-02 1E-03 1E-04 1E-05
125C 25C
125C 100 25C
50 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-3.4A Capacitance (pF) 800
600
Ciss
400
200
Crss Coss
165
20
0 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s
20 100s 10s 1ms 10ms Power (W) 15 TJ(Max)=150C TA=25C
-ID (Amps)
10.0
10
1.0
1s DC
5
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AON4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
1.0E+01 125C Capacitance (pF) 1.0E+00 IF (Amps) 80 60 40 20 25C 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (Volts) Figure 12: Schottky Forward Characteristics 0 0 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 100 f = 1MHz
1.0E-01
1.0E-02
0.5
1.0E-02
Leakage Current (A)
0.4 VF (Volts) IF=0.5A 0.3
1.0E-03 VR=16V
1.0E-04
0.2
1.0E-05
0.1 0 25 50 75 100 Temperature (C) 125 150
1.0E-06 0 25 50 75 100 125 150 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature
Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=80C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse T 10 100 1000
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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